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W29N01HVSINA IC FLASH 1GBIT PARALLEL 48TSOP Winbond Electronics

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W29N01HVSINA IC FLASH 1GBIT PARALLEL 48TSOP Winbond Electronics

Name: W29N01HVSINA IC FLASH 1GBIT PARALLEL 48TSOP Winbond Electronics
Brand: Winbond Electronics
Price: 1 USD

Brand Name : Winbond Electronics

Model Number : W29N01HVSINA

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Non-Volatile

Memory Format : FLASH

Technology : FLASH - NAND (SLC)

Memory Size : 1Gbit

Memory Organization : 128M x 8

Memory Interface : Parallel

Clock Frequency : -

Write Cycle Time - Word, Page : 25ns

Access Time : 25 ns

Voltage - Supply : 2.7V ~ 3.6V

Operating Temperature : -40°C ~ 85°C (TA)

Mounting Type : Surface Mount

Package / Case : 48-TFSOP (0.724", 18.40mm Width)

Supplier Device Package : 48-TSOP

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Product Details

GENERAL DESCRIPTION

The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K ´8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29C040 results in fast write (erase/program) operations with extremely low current consumption (compared to other comparable 5-volt flash memory products.) The device can also be erased and programmed by using standard EPROM programmers.

FEATURES

· Single 5-volt write (erase and program) operations
· Fast page-write operations
- 256 bytes per page
- Page write (erase/program) cycle: 5 mS (typ.)
- Effective byte-write (erase/program) cycle time: 19.5 mS
- Optional software-protected data write
· Fast chip-erase operation: 50 mS
· Two 16 KB boot blocks with lockout
· Page write (erase/program) cycles: 50K (typ.)
· Read access time: 70/90/120 nS
· Ten-year data retention
· Software and hardware data protection
· Low power consumption
- Active current: 25 mA (typ.)
- Standby current: 20 mA (typ.)
·Automaticwrite (erase/program) timing with internal VPP generation
· End of write (erase/program) detection
- Toggle bit
- Data polling
· Latched address and data
· All inputs and outputs directly TTL compatible
· JEDEC standard byte-wide pinouts
· Available packages: 32-pin 600 mil DIP, TSOP and PLCC

Specifications

Attribute	Attribute Value
Manufacturer	Winbond Electronics
Product Category	Memory ICs
Series	-
Packaging	Tray
Package-Case	48-TFSOP (0.488", 12.40mm Width)
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	2.7 V ~ 3.6 V
Supplier-Device-Package	48-TSOP (18.4x12)
Memory Capacity	1G (128M x 8)
Memory-Type	FLASH - NAND (SLC)
Speed	25ns
Format-Memory	FLASH

Descriptions

FLASH - NAND (SLC) Memory IC 1Gb (128M x 8) Parallel 25ns 48-TSOP (18.4x12)

NAND Flash 3V/3.3V 1G-bit 128M x 8 48-Pin TSOP-I

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