Home > Flash Memory IC >

W949D6DBHX5I IC DRAM 512MBIT PAR 60VFBGA Winbond Electronics

Product Categories

Sanhuang electronics (Hong Kong) Co., Limited

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

W949D6DBHX5I IC DRAM 512MBIT PAR 60VFBGA Winbond Electronics

Name: W949D6DBHX5I IC DRAM 512MBIT PAR 60VFBGA Winbond Electronics
Brand: Winbond Electronics
Price: 1 USD

Brand Name : Winbond Electronics

Model Number : W949D6DBHX5I

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : DRAM

Technology : SDRAM - Mobile LPDDR

Memory Size : 512Mbit

Memory Organization : 32M x 16

Memory Interface : Parallel

Clock Frequency : 200 MHz

Write Cycle Time - Word, Page : 15ns

Access Time : 5 ns

Voltage - Supply : 1.7V ~ 1.95V

Operating Temperature : -40°C ~ 85°C (TA)

Mounting Type : Surface Mount

Package / Case : 60-TFBGA

Supplier Device Package : 60-VFBGA (8x9)

Contact Now

Product Details

GENERAL DESCRIPTION

W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words × 4 banks × 16 bits. Using pipelined architecture and 0.11 µm process technology, W9425G6DH delivers a data bandwidth of up to 500M words per second (-4). To fully comply with the personal computer industrial standard, W9425G6DH is sorted into four speed grades: -4, -5, -6 and -75. The -4 is compliant to the DDR500/CL3 specification. The -5 is compliant to the DDR400/CL3 specification. The -6 is compliant to the DDR333/CL2.5 specification (the -6I grade which is guaranteed to support -40°C ~ 85°C). The -75 is compliant to the DDR266/CL2 specification (the 75I grade which is guaranteed to support -40°C ~ 85°C).

FEATURES

• 2.5V ±0.2V Power Supply for DDR266/DDR333
• 2.6V ±0.1V Power Supply for DDR400/DDR500
• Up to 250 MHz Clock Frequency
• Double Data Rate architecture; two data transfers per clock cycle
• Differential clock inputs (CLK and CLK )
• DQS is edge-aligned with data for Read; center-aligned with data for Write
• CAS Latency: 2, 2.5 and 3
• Burst Length: 2, 4 and 8
• Auto Refresh and Self Refresh
• Precharged Power Down and Active Power Down
• Write Data Mask
• Write Latency = 1
• 7.8µS refresh interval (8K / 64 mS refresh)
• Maximum burst refresh cycle: 8
• Interface: SSTL_2
• Packaged in TSOP II 66-pin, 400 mil, 0.65 mm pin pitch, using Pb free with RoHS compliant

Specifications

Attribute	Attribute Value
Manufacturer	Winbond Electronics
Product Category	Memory ICs
Series	-
Packaging	Tray Alternate Packaging
Package-Case	60-TFBGA
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	1.7 V ~ 1.95 V
Supplier-Device-Package	60-VFBGA (8x9)
Memory Capacity	512M (32M x 16)
Memory-Type	Mobile LPDDR SDRAM
Speed	200MHz
Format-Memory	RAM

Descriptions

SDRAM - Mobile LPDDR Memory IC 512Mb (32M x 16) Parallel 200MHz 5ns 60-VFBGA (8x9)

DRAM Chip Mobile LPDDR SDRAM 512Mbit 32Mx16 1.8V 60-Pin VFBGA

Cheap W949D6DBHX5I IC DRAM 512MBIT PAR 60VFBGA Winbond Electronics for sale

W949D6DBHX5I IC DRAM 512MBIT PAR 60VFBGA Winbond Electronics Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Sanhuang electronics (Hong Kong) Co., Limited
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!